http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110890376-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b43f4a86fc8f7ad28689d833acac53 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11568 |
| filingDate | 2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110890376-A |
| titleOfInvention | Preparation method of semiconductor device |
| abstract | The present application relates to a method for preparing a semiconductor device, which includes: providing a target to be etched; sequentially forming a first mask layer, a first anti-reflection layer and a second mask layer on the surface of the target to be etched; In the reaction gas, the second anti-reflection layer is formed on the surface of the second mask layer; the photoresist mask pattern is formed on the surface of the second anti-reflection layer; A first reticle pattern is formed on the first anti-reflection layer; a dielectric layer is formed on the first anti-reflection layer and the first reticle pattern; other parts of the first anti-reflection layer except the sidewall are etched, to form a second intermediate mask pattern; using the second intermediate mask pattern as an etching mask, etching the first anti-reflection layer and the first mask layer to form a target pattern on the target to be etched. Such a design can alleviate the phenomenon of low film retention of the photoresist and the second anti-reflection layer, and ensure the good rate in the preparation process of the semiconductor device. |
| priorityDate | 2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.