| abstract |
A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer. The etching composition includes at least one oxidant selected from H 2 O 2 , O 2 , IO 4 − , BrO 3 , ClO 3 , S 2 O 8 − , KIO 3 , H 5 IO 6 , KOH and HNO 3 , at least enhancer selected from HF, NH 4 OH, H 3 PO 4 , H 2 SO 4 , NH 4 F and HCl, and a buffer solution, mixed together in certain amounts. |