http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6197689-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_86df70be6baafcc380c5c26c307c005b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1997-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7012af116e91a50c9dcb41d71beef206 |
| publicationDate | 2001-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6197689-B1 |
| titleOfInvention | Semiconductor manufacture method with aluminum wiring layer patterning process |
| abstract | A method of manufacturing a semiconductor device includes: a step of forming a conductive layer on a semiconductor substrate, the conductive layer being made of aluminum or aluminum alloy; a step of forming a resist pattern on the conductive layer, the resist pattern having an opening pattern including a narrow space having a high aspect ratio and an open space having a low aspect ratio; a main etching step of dry-etching the conductive layer by using the resist mask as an etching mask, wherein the conductive layer is almost etched in the open space having the low aspect ratio and not fully etched in the narrow space having the high aspect ratio; and an over etching step of further dry-etching the conductive layer by using the resist mask as an etching mask and by using as etchant a mixed gas of HCl gas and at least one species of gas selected from the group consisting of He, Ar, Ne and H2. The proposed method provides a process of etching an aluminum containing conductive layer at high patterning precision and with high reliability while suppressing electron shading damages. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6638833-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6893983-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005093165-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6617249-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7569936-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009203209-A1 |
| priorityDate | 1996-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.