| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0f8dc752059a228fada0efdcc2901b9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-12 |
| filingDate |
1999-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7c42fb75b3ab5a33c35a183931f1f84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc761ca9108c4e37291f59fcd7dec7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0b708160c0c226949c794f80e228b20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55894e3c320ebc168512d06d3d0da0e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bcf14a57385219a0ac70c6dc5ab5cf1 |
| publicationDate |
2001-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6191183-B1 |
| titleOfInvention |
Method for the formation of silica thin films |
| abstract |
The instant invention pertains to a composition that can form silica thin films, wherein said composition performs well as a substrate planarizing coating when applied to a substrate and can be converted by exposure to high-energy radiation into silica thin film with an excellent electrical insulating performance. The composition for the formation of silica thin films comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing the surface of the said substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9293513-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007292697-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7732824-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6833560-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006105181-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8735898-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7714079-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004076839-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8158992-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007051959-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7309529-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7306853-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6472076-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003201485-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005064199-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6656313-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010200871-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7132693-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793328-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6773950-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002195197-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7067193-B2 |
| priorityDate |
1997-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |