| abstract |
The present invention provides a positive photosensitive resin composition which, when exposed to far ultraviolet rays, in particular, ArF excimer laser light, shows excellent performances especially with respect to the residual film ratio, resist profile, resolution, and dry-etching resistance and does not pose the problem of development defects. The positive photosensitive resin composition comprising: n (A) a compound which generates an acid upon irradiation with actinic rays, n (B) a polymer having specific structures represented by formula (Ia), (Ib), (Ic) or (Id) defined in the specification, n (C) a nitrogen-containing basic compound, and n (D) at least one of a fluorine type surfactant and a silicone type surfactant. |