| abstract |
A process of fabricating a capacitor structure, using a tantalum oxide capacitor dielectric layer, has been developed. The process features deposition of a thin, high dielectric constant tantalum oxide layer, followed by a high density plasma anneal procedure, used to reduce the leakage current in the as-deposited tantalum oxide layer, that can evolve during normal operating conditions of the capacitor structure. The high density plasma anneal procedure is performed in a nitrous oxide ambient, at a temperature of about 400° C. |