| abstract |
In a semiconductor device manufacturing method, HBr gas (etching gas) is made plasma while the gas pressure thereof is kept to 2 mTorr or less, and ion elements of the plasma are accelerated under bias power of 150 W or more to etch a titanium silicide film 11. Thereafter, HBr gas is further made plasma while the gas pressure thereof is kept to 5 to 10 mTorr, and ion elements of the plasma are accelerated under bias power of 10 to 100 W to etch a polysilicon film 10 with the ion elements in the plasma. |