| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
1996-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4da476cc5f900e7cdcac36f1b4cd828a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_816f80e5224b37d51cf3116a4935771a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2de6cddff141f92cab19d55613fef324 |
| publicationDate |
2000-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6077768-A |
| titleOfInvention |
Process for fabricating a multilevel interconnect |
| abstract |
A process for fabrication of a multilevel interconnect structure includes the formation of an inlaid interconnect (42) overlying an aluminum layer (34). The inlaid interconnect (42) is formed within an interlevel dielectric layer that is processed to contain an interconnect channel (24) and a via opening (14) residing at the bottom of the interconnect channel (24). The aluminum layer (34) is selectively deposited to fill the via opening (14) at the bottom of an interconnect channel (24). Selective deposition is enhanced by the use of a nucleation layer (20) which is formed on the bottom of the via opening, without being formed on the sidewalls, by use of directional deposition technique such as inductively coupled plasma (ICP) deposition. Nucleation layer (20) eases requirements of a cleaning operation prior to selective deposition and provides a surface from which void-free selective growth can occur. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6747333-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6551919-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6326301-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007117374-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7183193-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6486038-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6518167-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7468317-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010159693-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008003808-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009159561-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100502252-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004092094-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941206-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6521510-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004102039-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6380065-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6596625-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6534379-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355391-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6524929-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622305-B2 |
| priorityDate |
1996-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |