| abstract |
The present invention provides a method for the formation of a pattern, which comprises applying an antireflective coating film-forming composition solution comprising (A) a compound which undergoes crosslinking reaction when irradiated with actinic rays and (B) a dye to a substrate to form a coating film thereon, entirely irradiating the coating film with actinic rays to form an antireflective coating film, applying a resist solution to the antireflective coating film, drying the coated material to form a resist layer, and then subjecting the coated material to lithographic treatment to form a resist pattern on the antireflective coating film. The method enables the formation of a resist pattern having an excellent dimensional accuracy and section shape without causing the formation of an intermixed layer between the resist composition and antireflective coating film. |