Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_01396215308486fb20e9dd2f95037972 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-025 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 |
filingDate |
1997-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1999-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_193e0b70cca7508aba4c2424980475cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca289ef2f1cccd116f0bc5c262630dee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff6bf480a67981594ecb2f7e6ba30043 |
publicationDate |
1999-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-5989931-A |
titleOfInvention |
Low-cost methods for manufacturing field ionization and emission structures with self-aligned gate electrodes |
abstract |
Methods for forming field emission and/or field ionization structures with self-aligned gate electrode structures involve forming a cavity in a first face of a substrate and forming an oxide layer in the cavity. The oxide layer forms a mold for making a sharp field emission tip which will be exposed on a second face of the substrate. In a first method a gate electrode is formed in the substrate. The gate electrode is automatically spaced apart from and insulated from the tip by the oxide layer. The gate electrode may comprise a doped region in the substrate. In a variant method, a gate electrode is formed in a thin metal film deposited on the second face of the substrate. A photoresist mask is created by shining ultraviolet light on the first face of the substrate to expose the underside of a layer of photoresist deposited on the metal film in an area adjacent the tip mold. The mask is automatically aligned with the tip mold. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004015362-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7646149-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8785874-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012091715-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7348018-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9196447-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005189488-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832885-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9748071-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6967326-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005017648-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005018467-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004015362-A3 |
priorityDate |
1997-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |