http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5989931-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-025
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02
filingDate 1997-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1999-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_193e0b70cca7508aba4c2424980475cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca289ef2f1cccd116f0bc5c262630dee
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publicationDate 1999-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5989931-A
titleOfInvention Low-cost methods for manufacturing field ionization and emission structures with self-aligned gate electrodes
abstract Methods for forming field emission and/or field ionization structures with self-aligned gate electrode structures involve forming a cavity in a first face of a substrate and forming an oxide layer in the cavity. The oxide layer forms a mold for making a sharp field emission tip which will be exposed on a second face of the substrate. In a first method a gate electrode is formed in the substrate. The gate electrode is automatically spaced apart from and insulated from the tip by the oxide layer. The gate electrode may comprise a doped region in the substrate. In a variant method, a gate electrode is formed in a thin metal film deposited on the second face of the substrate. A photoresist mask is created by shining ultraviolet light on the first face of the substrate to expose the underside of a layer of photoresist deposited on the metal film in an area adjacent the tip mold. The mask is automatically aligned with the tip mold.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004015362-A2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005018467-A1
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priorityDate 1997-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 44.