| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
1995-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d3c1f16b0050389d11b3523604f8f24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a15a59819d487774e65e5f81f9c9c539 |
| publicationDate |
1999-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5989338-A |
| titleOfInvention |
Method for depositing cell nitride with improved step coverage using MOCVD in a wafer deposition system |
| abstract |
An embodiment of the present invention teaches a method for forming a storage capacitor during semiconductor memory device fabrication, the method comprising the steps of: forming a first capacitor plate structure comprising a polysilicon material having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of the first capacitor plate structure is greater in dimension than the horizontal component of the first capacitor plate structure; depositing a silicon nitride layer over the first capacitor plate structure by exposing the first capacitor plate structure to a gas vapor phase of an organometallic precursor and to an nitrogen based gas in an Metal Organic Chemical Vapor Deposition (MOCVD) chamber; and forming a second capacitor plate structure over the silicon nitride layer, the second capacitor plate structure being positioned to span at least a portion of the first capacitor plate structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004231587-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007254113-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6740554-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7651725-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6730977-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6518610-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6524867-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005227431-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008061439-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6759705-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6916380-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004147109-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008044557-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10038887-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10038887-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004212002-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6274510-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6613698-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7629033-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005156317-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6858536-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6254675-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7038263-B2 |
| priorityDate |
1995-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |