http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5883391-A

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publicationDate 1999-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5883391-A
titleOfInvention Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process
abstract High energy neutral contamination in an ion implanter can be caused by beam ions neutralised as they are temporarily accelerated at an electrode before being decelerated again to the desired implant energy. This occurs for example in the decel lens arrangement which includes an electrode at a relatively high negative potential to provide the required focusing. The level of this contamination is monitored by measuring the current drain on this negative field electrode.
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Total number of triples: 73.