| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f1192a135e4bc40a5f201a9646f20172 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
1995-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df480bbf73517d2b32f649637a0f0ae6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b833543dd308114f0d174d59da9a514 |
| publicationDate |
1999-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5883013-A |
| titleOfInvention |
Method of producing semiconductor device |
| abstract |
A method of forming a silicone resin film for protecting a semiconductor substrate on the substrate for a certain period of time and then removing the film from the substrate including the steps of: (a) forming the silicone resin film, on at least one portion of the substrate; (b) treating the film with an organic solvent, so that a majority of the film is dissolved in the organic solvent and thereby removed from the substrate and that a residue remains on the substrate; (c) oxidizing the residue to silicon oxide; and (d) treating the silicon oxide with an aqueous solution containing at least one of hydrogen fluoride and ammonium fluoride, so as to dissolve the silicon oxide in the solution and to thereby remove the silicon oxide from the substrate is described. The silicone resin film formed on the substrate can be easily completely removed, without damaging the electrical characteristics of the semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8657966-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003226915-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6920941-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009298671-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011146727-A1 |
| priorityDate |
1994-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |