| abstract |
Disclosed is a crossover structure and method of fabricating such crossovers in microelectronic circuits. The invention utilizes as a separator between the crossover beam and the conductor on the substrate a mixture of at least 50 percent by weight of fine grain SiO 2 and an organic dielectric. For high temperature curing, this dielectric can be a silicone resin. For metallization systems which are sensitive to high temperatures, the dielectric can be a low temperature or ultra-violet curing organic material, such as an epoxy. The crossover processing is simplified by fabricating the beam crossover in direct contact with the insulating layer. |