| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
1997-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f17de47ccec57c70d9ce6f89f9fa44dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdd2d78a19a587af0b65c901329eee38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ce1dd1d611dfafdffc47f599998e584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5213758d32da35e28b9214d9b5dd709c |
| publicationDate |
1999-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5858826-A |
| titleOfInvention |
Method of making a blanket N-well structure for SRAM data stability in P-type substrates |
| abstract |
SRAMs conventionally formed on N-type substrates are instead formed on P-type substrates which have had the surface layer of the substrate converted to a blanket N-type well region. Preferably, the blanket N-type well region is formed by ion implantation of phosphorus ions to a dosage of between 5×10 12 to 2×10 13 /cm 2 at an energy of 200-1000 KeV. Use of a P-type substrate having a blanket N-well region formed by ion implantation are less expensive than the N-type substrates conventionally used, and make the SRAM processing techniques compatible with the P-type substrates conventionally used in microprocessors and other logic devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009258471-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009154259-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6297082-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8067279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8912104-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7317223-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7675076-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6274416-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7742325-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7671375-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006175628-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006157730-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005263815-A1 |
| priorityDate |
1996-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |