patent/US-5501993-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5501993-A

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95421ca98cd6c9b088dbf03ec09375ab
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-761 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
filingDate	1994-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	1996-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0b1e94415e38afc06da49dc922bb43c
publicationDate	1996-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-5501993-A
titleOfInvention	Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation
abstract	CMOS vertically modulated wells are constructed by using clustered MeV ion implantation to form a structure having a buried implanted layer for laterial isolation.
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priorityDate	1994-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578835 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291

Total number of triples: 128.