| abstract |
A p-i-n structure for use in photoconductors and diodes is disclosed, being formed of an AlxGa1-xN alloy (X=0->1) with InyGa1-YN (Y=0->1) which as grown by MOCVD procedure with the p-type layer adjacent the substrate. In the method of the subject invention, buffer layers of p-type material are grown on a substrate and then doped. The active, confinement and cap layers of n-type material are next grown and doped. The structure is masked and etched as required to expose a surface which is ion implanted and annealed. A p-type surface contact is formed on this ion-implanted surface which is of sufficiently low resistance as to provide good quality performance for use in a device. |