| abstract |
It is an object of the present invention to obtain a resist pattern of a high dimensional accuracy. In order to accomplish this object, a pattern lithography method according to the present invention comprises the steps of: forming a resist film 2 on a substrate 1 to be processed; applying a hydrous polymer solution 4 on the resist film 2; cross-linking polymers in the hydrous polymer solution to form a hydrogel film 4a of a predetermined thickness; and pattern-exposing the resist film 2 through the hydrogel film, and then, removing the hydrogel film 4a. |