| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
1996-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1998-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28c0f91da7067f1d429457438ff30e0e |
| publicationDate |
1998-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5741742-A |
| titleOfInvention |
Formation of aluminum-alloy pattern |
| abstract |
A method of forming an aluminum-alloy pattern at room temperature, which is capable of eliminating the generation of after-corrosion and enhancing the anisotropic processing. In a first step, an etching mask made of a silicon nitride based film is formed on an aluminum-alloy film formed on a barrier metal layer which is formed on a substrate. In a second step, the aluminum-alloy film is dry-etched at room temperature, to form a pattern of the aluminum-alloy film. The etching selection ratio of the aluminum-alloy film to the etching mask is thus improved, and further a sidewall protective film made of aluminum nitride is formed on the etching sidewall, thereby sufficiently performing the anisotropic processing for the aluminum-alloy pattern. In subsequent steps, the barrier metal layer may also be etched and removed at room temperature, and a further sidewall protective film made of aluminum oxide is formed on the etching sidewall as a result of oxygen plasma processing. Any remaining barrier metal layer may be perfectly removed as a final step as a result of over-etching. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189797-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6306313-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6228758-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6103137-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5985761-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004011763-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7931820-B2 |
| priorityDate |
1993-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |