| abstract |
A resist pattern formed on a substrate has a T-shaped cross section including a stem portion extending from the substrate surface and a cap portion connected to the stem portion and spaced from the substrate surface. Provided that alpha is a minimum of the angle which is defined between a tangent at the lower edge of the cap portion and the substrate surface, and h is the spacing between the lower edge of the cap portion and the substrate surface at an intermediate position, alpha and, h fall within a range defined and encompassed by tetragon ABCD wherein A: alpha =0 DEG , h=0.01 mu m, B: alpha =20 DEG , h=0.01 mu m, C: alpha =20 DEG , h=0.2 mu m, and D: alpha =0 DEG , h=0.3 mu m. In a patterning process including the steps of coating of a resist composition to form a resist coating, exposure, reversal baking and development, at least one condition is changed by reducing the thickness of the resist coating, reducing an exposure dose, lowering a reversal baking temperature, reducing a reversal baking time, increasing a developer temperature or extending a developing time such that a resist pattern of T-shaped cross section may be formed. |