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filingDate 1996-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1997-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1997-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5656533-A
titleOfInvention Method of preventing polysilicon stringers during formation of a stacked double polysilicon structure by using dielectric sidewall spacers
abstract A process for producing dual layer polysilicon structures without the formation of residual polysilicon stringers and the resulting structure. Dielectric sidewalls are formed upon a first polysilicon structure to prevent the formation of overhang regions during subsequent oxidation that will harbor residual polysilicon stringers formed by the deposition of a second polysilicon structure on top of the first polysilicon structure.
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Total number of triples: 38.