| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2831 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-92 |
| filingDate |
1994-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1996-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e30b098437278d50b20853d5fb1131f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ded70d53798ef012786e7a579a5fc8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5474c8fd8a27be6709a6f41b4fbed3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69a4f58bce2b0682a9bacea9c7df542b |
| publicationDate |
1996-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5534112-A |
| titleOfInvention |
Method for testing electrical properties of silicon single crystal |
| abstract |
The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K 2 Cr 2 O 7 , hydrofluoric acid, and water thereby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104900509-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5688319-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7314766-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1089437-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1089437-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5834322-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004137752-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104900509-B |
| priorityDate |
1990-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |