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publicationDate 1993-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5271800-A
titleOfInvention Method for anisotropic etching in the manufacture of semiconductor devices
abstract Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.
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