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filingDate 1991-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1993-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1993-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5187110-A
titleOfInvention Field effect transistor-bipolar transistor darlington pair
abstract A high frequency amplifying device comprises a field effect transistor-bipolar transistor darlington pair. Such a device combines the main desirable features of both field effect transistors and bipolar transistors, therefore, having a high input impedance that is typical of FETs and a high transconductance (or high current gain) which is typical of bipolar transistors.
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Total number of triples: 37.