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filingDate 1990-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1992-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7a76c36940116f1c8163640eaddaf2c
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publicationDate 1992-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5114827-A
titleOfInvention Photoresists resistant to oxygen plasmas
abstract The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.
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priorityDate 1988-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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