| abstract |
A plasma processing apparatus includes an oxygen source 14 which provides gas to a plasma generating means 16 for generating plasma in a plasma generating area 40. Gas flows from the plasma generating area 40 to a wafer 30 placed in a processing area 60. A magnetic field generating area 50, located between the plasma generating area 40 and the processing area 60 is created by coils 20 and a power source 21. Charged particles are reflected by the magnetic field and are thus prevented from reaching the wafer 30. A baffle 22 is disposed above the processing area 60 to partly block charged particles. |