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publicationDate 1990-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4897365-A
titleOfInvention Reduced-beak planox process for the formation of integrated electronic components
abstract A method for reducing birdbeaks formed during a planox process is disclosed. On a silicon substrate (1), oxide (2) and nitride (3) are formed. The oxide and nitride are then selectively etched using a single plasma having high selectivity with respect to silicon and a photoresist mask (4). The high selectivity toward silicon is achieved by use of a CHF 3 +CO 2 plasma under conditions of 30:1 oxide/silicon selectivity. Field oxide regions (5) with reduced birdbeaks can then be formed.
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