| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G5-08235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G5-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
1987-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1989-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1483e143cd2cd4b146c4924d394cb061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cafbc50bb1fddd34e158e7117405f95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbee6b2059646175073c21d4feac106d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e78d5ff5780fb4e75e3a299e2e166c77 |
| publicationDate |
1989-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4868014-A |
| titleOfInvention |
Method for forming thin film multi-layer structure member |
| abstract |
A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005045884-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005008880-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006157677-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8796125-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010311212-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009053536-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010270654-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004201064-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5966594-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8945339-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004183077-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004183076-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6242758-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7468526-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011104877-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0063956-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012103518-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5923997-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005020002-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7271858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006114535-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7553545-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2885260-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8815709-B2 |
| priorityDate |
1986-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |