http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4857138-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0aa4909604b53e92db230cad6ecf893 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1985-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1989-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b5904fe090f355647ce83b9b14b0827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd5fe5af1200ffdfc4d8ac2fcaad1b1c |
| publicationDate | 1989-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-4857138-A |
| titleOfInvention | Silicon trench etch |
| abstract | An improved method is disclosed for obtaining relatively deep (6 microns) trenches in single crystal silicon wafers. The method comprises exposing the wafer to a plasma formed in a gas mixture comprising Freon 11 (CCl3F), sulphur hexafluoride (SF6) and either helium or argon. The etch takes place at a pressure of 1-3 torr (133-400 Pa) in a narrow gap (6 mm.) planar plasma reactor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6133615-A |
| priorityDate | 1985-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.