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filingDate 1986-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1987-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_425eb084a2acc02c77f4407f1827a445
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publicationDate 1987-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4698126-A
titleOfInvention Method of manufacturing a semiconductor device by plasma etching of a double layer
abstract A method of manufacturing a semiconductor device, in which a double layer consisting of a layer of polycrystalline silicon and a top layer of a silicide is applied to a surface of a semiconductor substrate coated with a layer of silicon oxide. After an etching mask has been provided, the double layer is etched in a plasma formed in chlorine gas to which up to 20% by volume of tetrachloromethane is added until the layer of polycrystalline silicon is etched. Thus, the double layer is etched anisotropically and the layer of silicon oxide is attacked in practice to a very small extent.
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priorityDate 1985-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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