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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-225
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
filingDate 1986-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1986-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_464cd01954d1ec73a4ddbcbcc24225a2
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publicationDate 1986-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4619719-A
titleOfInvention Process for forming a doped oxide film and composite article
abstract A process for forming a doped oxide film suitable for doping a semiconductor wafer substrate material and composite article. A silicon tetra-alkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorganosiloxane is subsequently admixed with a reactive dopant source to form a soluble metallosiloxane polymer. The metallosiloxane polymer is coated onto a semiconductor wafer substrate material to produce a metallosiloxane-wafer composite article. The composite article is heated to produce an impurity doped semiconductor wafer suitable for electronic applications.
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Total number of triples: 43.