Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 |
filingDate |
1981-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1983-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd44642f176b750d30ec4e1d00889810 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72f59fa29690f50c676931aac86791a9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5b14843519cb94a7f1fe5b85759a882 |
publicationDate |
1983-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-4405707-A |
titleOfInvention |
Method of producing relief structures for integrated semiconductor circuits |
abstract |
Relief structures comprised of double lacquer layers on substrates already having relief structures for integrated semiconductor circuits are produced by applying a lower lacquer layer onto such substrate and which is composed of a material which does not cross-link or decompose due to radiation energy and which has only relatively slight sensitivity at the radiation energy dosage range utilized for structuring; applying an upper lacquer layer onto the lower lacquer layer and which upper layer is thinner relative to the thickness of the lower layer by a factor of at least 2 and is composed of a highly sensitive negative lacquer material; generating desired relief structures in the upper lacquer layer and removing those portions of the lower lacquer which are not covered by the upper negative lacquer layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5554485-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006286809-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7517808-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5482817-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5366846-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5691395-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5401614-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6551749-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5262280-A |
priorityDate |
1980-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |