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filingDate 1979-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1981-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1981-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4305048-A
titleOfInvention Mode stabilized semiconductor laser
abstract Longitudinal mode control is achieved in a heterojunction semiconductor laser (201-208) by doping the active region (203) of the laser with a deep level electron or hole trap. The trap is chosen to have a carrier capture cross section σ e and an optical cross section σ o such that the ratio of P, the average number of photons per cubic centimeter, to P s is between 0.1 and 100 where P s is equal to (Nσ e V/σ o C o ), N is the carrier density, V is the carrier thermal velocity, and C o is the speed of light in the material. In a specific embodiment the active region is bombarded by photons to achieve deep level electron traps in the active region.
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