http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3914001-A1

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filingDate 1989-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1990-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-3914001-A1
titleOfInvention SEMICONDUCTOR LASER WITH IMPRESSED FASHION SPECTRUM AND METHOD FOR THE PRODUCTION THEREOF
abstract The laser diode (1) has a laser active layer (2) obtained in a correspondingly doped substrate (4), with light interference points (7) obtained within the laser active layer (2) and the adjacent layers (3). These provide a diffusion coefficient for light of the laser wavelength which is increased by at least 1 per cent. The interference points are periodically distributed to form a mode stabilisation grid corresponding to the laser diode mode spectrum. Pref. the interference points (7) are obtained by operation of the laser diode (1) at an increased current, with the temp. and/or the pulsed current regulated to obtain a mode spectrum corresponding to that under normal operation. ADVANTAGE - Improved laser dynamic stability.
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