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filingDate 1978-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1980-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4208215-A
titleOfInvention Method for enhancing the crystallization rate of high purity amorphous Si3 N2 powder by intimate contact with a titanium containing material
abstract High purity, fine Si 3 N 4 powder produced by the vapor phase reaction of SiCl 4 with NH 3 is amorphous. The crystallization rate of the amorphous powder is enhanced by heating the powder while in intimate contact with a titanium containing material, for example, TiN codeposited with the Si 3 N 4 by the simultaneous reaction of TiCl 4 with NH 3 .
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