http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3947298-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5231c81de1a546c1d6a9325c10910ce |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-158 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-051 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 |
| filingDate | 1975-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1976-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b672dcfcb9daaf82031823a71dbd0dbb |
| publicationDate | 1976-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-3947298-A |
| titleOfInvention | Method of forming junction regions utilizing R.F. sputtering |
| abstract | A semiconductor integrated circuit in which accurate location of emitter contacts on diffused emitter regions is achieved by using an apertured multilayered mask on the surface of a semiconductor body through which the impurity forming the emitter region is diffused into the body from an oxidizing atmosphere such that the emitter region diffuses laterally to form junctions beyond the edges of said apertures and beneath the mask for a distance which is a function of the depth of the junctions and the coating formed during the diffusion process is removed by R.F. sputtering which removes the emitter oxide without substantially undercutting the oxide layer beneath the nitride barrier layer of the emitter mask so that the junction on the surface of the semiconductor body produced by the lateral diffusion of the emitter region remains covered by the surface passivating oxide layer. Structures having microminiature emitter areas and depths with and without preferentially etched isolation regions are disclosed. |
| priorityDate | 1974-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.