| abstract |
There is disclosed a process for the hydrogen reduction of silicon tetrachloride to produce trichlorosilane. In accordance with the process, hydrogen and silicon tetrachloride vapors are passed through a reaction chamber at relatively high flow rates with approximately 50 mole percent silicon tetrachloride in the mixture. The reaction vessel is held at a temperature of between 900 DEG and 1200 DEG C. This process is a part of an overall system for the production of polycrystalline silicon for the semiconductor industry. |