| abstract |
Improved method for fabricating semiconductor devices including insulating layer over semiconductor body and metallic member over insulating layer prevents degradation of insulator by impurity ion, principally alkali ion, penetration. In accord with the process, a silicon dioxide passivation layer is first formed over the surface of the semiconductor and a thin layer of amorphous silicon nitride, impervious to alkali ion penetration is deposited over the silicon dioxide. Combined steps provide insulator which has excellent insulating properties of silicon dioxide and impermeability to alkali ions of amorphous silicon nitride. |