| abstract |
In a Schottky diode of the type wherein a metal silicide layer interfaces with a silicon semiconductive body to form a Schottky diode, an inert barrier layer of a refractory metal, such as Mo, Ti, W, Ta and alloys thereof, is deposited overlaying and in electrical contact with the metal silicide layer. An aluminum electrical connector electrode is deposited overlaying the barrier layer for intraconnecting the Schottky diode with other devices. The refractory barrier layer prevents the aluminum from diffusing into or otherwise reacting with the metal silicide layer in such a way as to deleteriously affect the performance of the Schottky diode. |