| abstract |
The method for producing tantalum contacts on silicon semiconductor substrates is particularly suitable for the production of Schottky junction diodes with a low potential threshold. The substrate is cleaned before the tantalum layer is applied. Then the tantalum layer (28) is applied at low pressure and low substrate temperature, whereby oxidation of the tantalum layer is avoided. The contact is then sintered, eliminating interface charges and films between the tantalum and the substrate. If a metal that reacts with silicon, such as aluminum for connecting lines, is used during processing, then a chrome layer (30) must be deposited between the tantalum layer (28) and the aluminum layer (32). |