http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3783046-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3157 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 1971-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1974-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b69ec0ab3d82923d470d70094def801b |
| publicationDate | 1974-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-3783046-A |
| titleOfInvention | Method of making a high-speed shallow junction semiconductor device |
| abstract | A SHALLOW JUNCTION, HIGH-SPEED SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME WHEREIN A FIRST OR BASE REGION OF ONE CONDUCTIVITY TYPE IS FORMED A SEMICONDUCTOR BODY USING PHOTOLITHOGRAPHIC PROCESS. MEXT, ONE OR MORE OXIDE LAYERS ARE VAPOR DEPOSITED AT A RELATIVELY LOW TEMPERATURE ON THE SURFACE OF THE STRUCTURE. AN OPENING IS THEN MADE IN THE VAPOR DEPOSITED OXIDE LAYERS TO PERMIT THE PASSAGE OF AN IMPURITY THERETHROUGH AND FORMS A SECOND, OPPOSITE CONDUCTIVITY TYPE EMITTER REGION WITHIN THE FIRST REGION. NEXT, A THIN LAYER OF OXIDE IS THERMALLY GROWN OVER THE EXPOSED PORTION OF THE BASE REGION AND OVER THE EXPOSED SURFACE OF THE VAPOR DEPOSITED OXIDE LAYERS. THEREAFTER, ONE OR MORE OPENINGS IN THE SURFACE OXIDE ARE SELECTIVELY MADE TO PERMIT THE FORMATION OF ELECTRICAL CONTACTS TO THE TRANSISTOR BASE REGION AND TO OTHER LIKE CONDUCTIVITY TYPE REGIONS IN THE SEMICONDUCTOR STRUCTURE. THEN, BY CONTROLLABLY ETCHING THE THIN THERMALLY GROWN OXIDE LAYER COVERING THE SECOND OR EMITTER REGION, THE EMITTER REGION CAN BE EXPOSED FOR THE PURPOSE OF MAKING OHMIC CONTACT THERETO. ACCORDING TO THE PRESENT PROCESS, THE THIN LAYER OF THERMALLY GROWN OXIDE IS "WASHED OUT" OF THE EMITTER REGION BY CONTROLLED ETCHING. SUCH CONTROLLED ETCHING ELIMINATES A CRITICAL MASKING STEP WHICH OTHERWISE WOULD HAVE BEEN REQUIRED TO MAKE A CONTACT OPENING FOR THE EMITTER REGION. OHMIC CONTACTS CAN NOW BE MADE TO THE BASE AND EMITTER REGIONS OF THE STRUCTURE USING CONVENTIONAL TECHNIQUES SUCH AS THE EVAPORATION OF ALUMINUM. SINCE ALL OXIDE MASKING IS REMOVED AFTER THE FORMATION OF THE BASE REGION, THE FINAL OXIDE MASKING ON THE SURFACE OF THE STRUCTURE IS OF ONE UNIFORM THICKNESS. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4566176-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3866312-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3886005-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6998639-B2 |
| priorityDate | 1971-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.