abstract |
COMPOSITIONS FOR REMOVING PHOTOSENSITIVE RESISTS FROM SILICON OR ALUMIMUN SUBSTRATES IN PHOTOLITHOGRAPHIC APPLICATION CONTAIN AN ARYLSULFONIC ACID (TOLUENESULFONIC ACID, XYLENESULFONIC ACID), A PHENOL(PHENOL,CRESOL, CHLOROPHENOL) EITHER ALONE OR WITH UP TO 75% BY WEIGHT OF THE TOTAL COMPOSITION OF A HALOGENATED DILUENT, (O-DICHLOROBENZENE, TETRACHLOROETHYLENE). AN ARYLSULFONIC ACID/ PHENOL RATIO OF ABOUT 1, WITH ABOUT 50% DIULENT, IS PREFERRED. |