| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5383
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5386 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2021-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c086bbfde3730927f8473109354e8fb7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_993e2527fd7f5ea3d0af171590db8a2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea4240fc067182d6be3000605e02056a |
| publicationDate |
2022-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022336360-A1 |
| titleOfInvention |
Diagonal vias in semiconductor structures |
| abstract |
A semiconductor structure including a first conductive layer, a second conductive layer situated above the first conductive layer, and a via extending diagonally between the second conductive layer and the first conductive layer to electrically connect the first conductive layer to the second conductive layer. |
| priorityDate |
2021-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |