| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2022-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95c25833331d73143f303a1fad816d17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a98876af6c745370e4ee10c8ef6baca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1b48db1f89c3bfc9414609bf31ae462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9064c9469cb6136b9ab072ae0ba76d60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df8d4b9d8f1925ff689d409c808fb907
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a3bb845602ac89aa265223516275e86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b230d86c69f120f8d128ebbdf2c7730
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b54483cb1006a2a62d3a27dca93d957c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e17d9c15448d18d990b66f5526d66d89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89ee3ba505649d87e139c5cb77f8f347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c39885e467949e9c75125ab013761fc |
| publicationDate |
2022-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022301930-A1 |
| titleOfInvention |
Method for filling recessed features in semiconductor devices with a low-resistivity metal |
| abstract |
A method for filling recessed features with a low-resistivity metal. The method includes providing a patterned substrate containing a recessed feature formed in a first layer and a second layer that is exposed in the recessed feature, forming a nucleation enhancement layer on a sidewall of the first layer in the recessed feature and depositing a metal layer in the recessed feature by vapor phase deposition, where the metal layer is deposited on the second layer and on the nucleation enhancement layer. An initial metal layer may be selectively formed on the second layer in the recessed feature before forming the nucleation enhancement layer. |
| priorityDate |
2021-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |