| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2022-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_322898ace294c41893dc08034f08bff7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67c78a3472dfaf4c325a3f77fc8453cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77f3574b27bce02f545726eb7ba187dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09b1c70d3158336bfea6be53ee4a8b4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e72cdc0ff85db1da6c6f43192e8ae5c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbce368a314f5dec6c9ef3f538b623da |
| publicationDate |
2022-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022262606-A1 |
| titleOfInvention |
Plasma processing method |
| abstract |
An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more. |
| priorityDate |
2017-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |