| abstract |
A method of forming a semiconductor structure includes: forming an interconnect structure over a substrate; forming a pad over the interconnect structure, wherein the pad is electrically connected to the interconnect structure; forming a bonding dielectric layer over the interconnect structure; and forming a bonding metal layer in the bonding dielectric layer to electrically connect to the interconnect structure, wherein the bonding metal layer includes a via plug and a metal feature formed over the via plug, a height of the metal feature is greater than or equal to a height of the via plug. |