| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76858 |
| classificationCPCInventive |
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| classificationIPCInventive |
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| filingDate |
2019-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba7cb0fe4c7b6fe514054d3a670e96a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b89acf3613415adf3916e0e82a0f9e3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fac422631db49adb5ebc32de8544fa1b |
| publicationDate |
2021-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021175249-A1 |
| titleOfInvention |
Integrated Assemblies Having One or More Modifying Substances Distributed Within Semiconductor Material, and Methods of Forming Integrated Assemblies |
| abstract |
Some embodiments include a method of forming an integrated assembly. A stack of alternating first and second materials is formed over a conductive structure. The conductive structure includes a semiconductor-containing material over a metal-containing material. An opening is formed to extend through the stack and through the semiconductor-containing material, to expose the metal-containing material. The semiconductor-containing material is doped with carbon and/or with one or more metals. After the doping of the semiconductor-containing material, the second material of the stack is removed to form voids. Conductive material is formed within the voids. Insulative material is formed within the opening. Some embodiments include integrated assemblies having carbon distributed within at least a portion of a semiconductor material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11621273-B2 |
| priorityDate |
2019-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |