| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb141b396e502bfce986c491d722e401 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K2211-1011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K2211-104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-171 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-154
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate |
2020-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_078f73c4d5f7e774b9c30f02ab0da786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14c873b93fe4a6bf1cd9e381bb1f5de6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_121a2db354c9c57fc9274993cb343a53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15255079dfc825438a436c9d7a4f5f07 |
| publicationDate |
2021-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021147747-A1 |
| titleOfInvention |
Fluorescent conjugated polymers containing semi-ladder units for light-emitting field-effect transistors |
| abstract |
Materials are provided for use as active emissive layers in organic electronic devices such as light-emitting filed effect transistors. Light-emitting transistors (LET) are an alternative to light-emitting diodes and have several important benefits, however, materials developed specifically for LET are quite scarce. Herein a new family of materials is disclosed that has been developed specifically for LET. |
| priorityDate |
2019-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |