Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
filingDate |
2019-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed8f3685f7edd0cb8afc69dc81592d41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a0dfcbf434bd6a45b792fd64e5d07e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d039c28605ebca04a260c25da1a7dc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60661cbf598e365e988d959591c43d55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb |
publicationDate |
2021-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2021104440-A1 |
titleOfInvention |
Vertical tunneling field effect transistor with dual liner bottom spacer |
abstract |
Embodiments of the present invention are directed to fabrication method and resulting structures for vertical tunneling field effect transistors (VFETs) having a dual liner bottom spacer. In a non-limiting embodiment of the invention, a first liner is formed on a top surface of a source or drain (S/D) region and sidewalls of a semiconductor fin. Portions of a spacer are removed to expose a first region and a second region of the first liner. The first region of the first liner is directly on the S/D region and the second region is over the semiconductor fin. A second liner is formed on the first liner. A first portion of the second liner is formed by selectively depositing dielectric material on the exposed first region and exposed second region of the first liner. The first liner and the second liner collectively define the dual liner bottom spacer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11640987-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022246746-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728408-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646235-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11502184-B2 |
priorityDate |
2019-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |