| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2020-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3efc1ccd58de78f4df1c6125fd67473a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8608ac69f34f16951d4199d6ca8e4663 |
| publicationDate |
2021-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021104411-A1 |
| titleOfInvention |
Etching solution, and method of producing semiconductor device |
| abstract |
A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including a fluoride and an oxidizing agent, wherein the fluoride includes hexafluorosilicic acid, and an etching rate A as measured under the following conditions is 10 Å/min or more: a blanket substrate having a layer of Si0.75Ge0.25 on the surface thereof is immersed in an etching solution at 25° C., and the etching rate is measured. |
| priorityDate |
2019-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |